GWM180-004X2-SMD IXYS, GWM180-004X2-SMD Datasheet

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GWM180-004X2-SMD

Manufacturer Part Number
GWM180-004X2-SMD
Description
Manufacturer
IXYS
Datasheet

Specifications of GWM180-004X2-SMD

Vdss, Max, (v)
40
Id25, Tc = 25°c, (a)
180
Id80, Tc = 80°c, (a)
-
Id90, Tc = 90°c, (a)
136
Rds(on), Max, Tj = 25°c, (mohms)
2.5
Tf, Typ, (ns)
170
Tr, Typ, (ns)
240
Rthjc, Max, (ºc/w)
1.0
Package Style
ISOPLUS-DIL™
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Preliminary data
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
MOSFETs
Symbol
V
V
I
I
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
R
R
1)
DSS
GSS
D25
D90
D110
F25
F90
F110
d(on)
r
d(off)
f
GS(th)
GS
on
off
recoff
V
DSS
DSon
thJC
thJH
g
gs
gd
DS
= I
1)
D
·(R
DS(on)
Conditions
T
T
T
T
T
T
T
Conditions
on chip level at
V
V
V
V
V
inductive load
V
I
T
with heat transfer paste (IXYS test setup)
D
J
J
C
C
C
C
C
C
GS
DS
DS
GS
GS
GS
= 135 A; R
= 125°C
= 25°C to 150°C
= 25°C
= 90°C
= 110°C
= 25°C (diode)
= 90°C (diode)
= 110°C (diode)
+ R
= V
= 10 V ; I
= 20 V; I
= ± 20 V; V
= 10 V; V
= +10/0 V; V
Pin to Chip
DSS
; V
)
D
D
GS
DS
G
= 100 A
= 1 mA
= 39 Ω;
DS
= 0 V
= 20 V; I
DS
= 0 V
= 24 V
D
= 100 A
T
T
T
T
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
G1
S1
G2
S2
(T
J
= 25°C, unless otherwise specified)
min.
G3
G4
S4
S3
2.5
Characteristic Values
0.003
Maximum Ratings
0.12
0.51
typ.
110
150
240
350
170
1.9
2.8
1.3
50
33
30
G5
G6
S6
S5
max.
± 20
180
136
120
182
112
2.5
4.5
0.2
1.0
1.6
40
88
5
K/W
K/W
mW
mW
mJ
mJ
mJ
nC
nC
nC
µA
µA
µA
ns
ns
ns
ns
L+
L1
L2
L3
L-
V
V
A
A
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
• Space and weight savings
Package options
• 2 lead forms available
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low R
- optimized intrinsic reverse diode
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
- isolated DCB ceramic base plate
- straight leads (SL)
- SMD lead version (SMD)
DSS
DSon typ.
connections
with optimized heat transfer
Straight leads
GWM 180-004X2
DSon
= 1.9 mW
= 40 V
= 180 A
Surface Mount Device
20110307c
1 - 6

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GWM180-004X2-SMD Summary of contents

Page 1

... R thJC R with heat transfer paste (IXYS test setup) thJH ·( DS(on) Pin to Chip IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings ± 20 ...

Page 2

... P pins and mounting tab in the case Weight ·( DS(on) Pin to Chip IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 0.9 1.2 38 0.31 14 ...

Page 3

... G6 L3 Part Name & Leads Ordering Packing Unit Marking Straight Standard GWM 180-004X2 - SL SMD Standard GWM 180-004X2 - SMD IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved L eads GWM 180-004X1-SL 37,5 +0,20 (11x) 3 ±0,05 1,5 1 ±0, ...

Page 4

... R normalized DS(on) 0.5 0.0 - [°C] VJ Fig. 5 Typ. drain source on-state resistance R versus junction temperature T DS(on) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved I D [A] 75 100 125 150 DSS VJ = 25° 6 [ ...

Page 5

... E x10 rec(on) 0 [Ω] G Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 200 180 160 140 120 I D 100 [ ...

Page 6

... F Fig. 15 Reverse recovery charge Q of the body diodes versus di/dt Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 125° ...

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