IXFR230N20T IXYS, IXFR230N20T Datasheet - Page 2

• Manufacturer Part Number: IXFR230N20T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFR230N20T

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 156
• Rds(on), Max, Tj=25°c, (?): 0.008
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 378
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.25
• Package Style: ISOPLUS247

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1:
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 60A, V
= 115A, -di/dt = 100A/μs
= 75V, V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
GS
D
DS
GS
DS
DS
= 60A, Note 1
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 100A
= 115A
5,049,961
5,063,307
5,187,117
JM
100
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
2540
0.15
160
310
104
378
125
Typ.
10.60
28
29
86
6,162,665
6,259,123 B1
6,306,728 B1
41
35
Typ.
0.74
Max.
0.25
Max.
200
230
920
1.3
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS247 (IXFR) Outline
6,727,585
6,771,478 B2 7,071,537
IXFR230N20T
7,005,734 B2
7,063,975 B2
1 = Gate
2,4 = Drain
3 = Source
7,157,338B2