IXFR230N20T IXYS, IXFR230N20T Datasheet

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IXFR230N20T

Manufacturer Part Number
IXFR230N20T
Description
Trench HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFR230N20T

Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
156
Rds(on), Max, Tj=25°c, (?)
0.008
Ciss, Typ, (pf)
28000
Qg, Typ, (nc)
378
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
600
Rthjc, Max, (k/w)
0.25
Package Style
ISOPLUS247
GigaMOS
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
J
GS
≤ 175°C
= 1M
T
J
Ω
= 150°C
JM
IXFR230N20T
20..120/4.5..27
200
3.0
Min.
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
2500
± 20
± 30
Typ.
200
200
156
630
100
600
175
300
260
20
5
3
± 200
Max.
5.0
8.0 mΩ
50
3 mA
N/lb.
V/ns
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
Features
Advantages
Applications
ISOPLUS247
G = Gate
S = Source
D25
rr
Synchronous Recification
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Fast Intrinsic Diode
Avalanche Rated
Low Package Inductance
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
E153432
D
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
D
200V
156A
8.0mΩ Ω Ω Ω Ω
200ns
= Drain
Isolated Tab
DS100234A(06/11)

Related parts for IXFR230N20T

IXFR230N20T Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved IXFR230N20T Maximum Ratings 200 Ω 200 GS ± 20 ± 30 156 630 JM 100 3 ≤ 175° 600 -55 ... +175 175 -55 ... +175 300 260 2500 20 ...

Page 2

... I = 115A 125 DSS D 86 0.15 Characteristic Values Min. Typ. JM 0.74 10.60 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFR230N20T ISOPLUS247 (IXFR) Outline Max °C/W 0.25 °C/W Max. 230 A 920 A 1.3 V 200 ns μC A 6,404,065 B1 ...

Page 3

... Value vs. D 180 160 T = 175ºC 140 J 120 100 25º 200 250 300 350 IXFR230N20T Fig. 2. Extended Output Characteristis @ 15V GS 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V ...

Page 4

... T = 25º 0.8 1.0 1.2 1.4 1,000 C iss 100 C oss 10 C rss IXFR230N20T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 I - Amperes D Fig. 10. Gate Charge V = 100V 115A 10mA 120 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFR230N20T 0.1 1 IXYS REF: F_230N20T(9E)10-20-10-A 10 ...

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