IXFZ520N075T2 IXYS, IXFZ520N075T2 Datasheet - Page 5

• Manufacturer Part Number: IXFZ520N075T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFZ520N075T2

• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 465
• Rds(on), Max, Tj=25°c, (?): 0.0013
• Ciss, Typ, (pf): 41000
• Qg, Typ, (nc): 545
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.25
• Package Style: DE475

© 2010 IXYS CORPORATION, All Rights Reserved
180
160
140
120
100
600
500
400
300
200
100
46
44
42
40
38
36
34
32
80
60
40
20
0
0
40
25
1
Fig. 17. Resistive Turn-off Switching Times vs.
R
V
Fig. 15. Resistive Turn-on Switching Times vs.
T
V
t
G
DS
J
r
DS
35
= 1Ω , V
= 125ºC, V
60
2
= 37.5V
= 37.5V
Fig. 13. Resistive Turn-on Rise Time vs.
45
3
GS
80
t
GS
= 10V
d(on)
= 10V
55
4
- - - -
Junction Temperature
100
T
Gate Resistance
Drain Current
T
J
J
- Degrees Centigrade
I
= 25ºC
D
65
R
5
- Amperes
I
G
D
- Ohms
120
= 200A
75
I
6
D
I
D
= 200A
140
= 100A
R
V
t
f
G
DS
85
7
= 1Ω, V
= 37.5V
160
95
GS
8
t
= 10V
d(off)
I
T
105
D
J
180
= 100A
= 125ºC
- - - -
9
115
10
200
240
200
160
120
80
40
0
180
160
140
120
100
80
60
40
125
600
500
400
300
200
100
180
160
140
120
100
44
42
40
38
36
34
32
30
80
60
40
20
0
0
25
40
1
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
T
V
R
V
t
f
J
DS
DS
35
G
= 125ºC, V
2
= 1Ω , V
60
= 37.5V
= 37.5V
Fig. 14. Resistive Turn-on Rise Time vs.
45
3
GS
GS
t
80
d(off)
= 10V
I
55
= 10V
Junction Temperature
D
= 200A, 100A
T
4
- - - -
J
Gate Resistance
- Degrees Centigrade
65
100
I
R
Drain Current
D
5
G
I
= 100A
D
- Ohms
IXFZ520N075T2
- Amperes
75
120
6
T
J
85
= 125ºC
R
V
t
T
f
DS
G
J
140
= 1Ω, V
= 25ºC
7
= 37.5V
95
GS
8
105
160
t
= 10V
d(off)
I
D
= 200A
115
- - - -
9
180
125
10
140
130
120
110
100
90
80
70
600
500
400
300
200
100
0
200