IXFZ520N075T2 IXYS, IXFZ520N075T2 Datasheet - Page 4

• Manufacturer Part Number: IXFZ520N075T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFZ520N075T2

• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 465
• Rds(on), Max, Tj=25°c, (?): 0.0013
• Ciss, Typ, (pf): 41000
• Qg, Typ, (nc): 545
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.25
• Package Style: DE475

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
350
300
250
200
150
100
200
180
160
140
120
100
1.0
0.1
80
60
40
20
50
0
0
3.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.4
3.5
10
0.5
Fig. 7. Input Admittance
T
J
Fig. 11. Capacitance
= 150ºC
T
15
J
4.0
= 150ºC
0.6
V
V
V
SD
GS
DS
- Volts
20
- Volts
- Volts
0.7
25ºC
4.5
25
C iss
C oss
C rss
0.8
- 40ºC
30
T
J
= 25ºC
5.0
0.9
35
5.5
1.0
40
10,000
1,000
280
240
200
160
120
100
80
40
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
0
V
I
I
T
T
Single Pulse
D
G
DS
J
C
20
= 260A
= 10mA
= 175ºC
= 25ºC
= 37.5V
Fig. 12. Forward-Bias Safe Operating Area
R
100
DS(on)
40
Limit
Fig. 8. Transconductance
60
1
Fig. 10. Gate Charge
200
Q
G
80
IXFZ520N075T2
- NanoCoulombs
I
V
D
DS
- Amperes
- Volts
100
300
T
J
120
= - 40ºC
10
25ºC
140
150ºC
400
160
DC
500
180
25µs
100µs
1ms
10ms
100ms
100
200