IXTA260N055T2 IXYS, IXTA260N055T2 Datasheet - Page 4

• Manufacturer Part Number: IXTA260N055T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of IXTA260N055T2

• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 260
• Rds(on), Max, Tj=25°c, (?): 0.0033
• Ciss, Typ, (pf): 10800
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): 60
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
200
180
160
140
120
100
360
320
280
240
200
160
120
80
60
40
20
80
40
0
0
3.0
0.3
0
0.4
f
= 1 MHz
5
3.5
0.5
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
0.6
4.0
T
Fig. 11. Capacitance
J
= 150ºC
Intrinsic Diode
0.7
15
T
V
J
GS
4.5
V
V
= 150ºC
0.8
SD
DS
- 40ºC
- Volts
25ºC
- Volts
20
- Volts
0.9
5.0
T
25
J
1.0
= 25ºC
C oss
C iss
C rss
5.5
1.1
30
1.2
6.0
35
1.3
6.5
1.4
40
1,000
100
140
120
100
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
External Lead Current Limit
R
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
10
V
I
I
DS(
20
J
C
D
G
DS
= 175ºC
= 25ºC
= 130A
= 10mA
on
20
= 28V
)
Limit
40
30
Fig. 8. Transconductance
60
40
Fig. 10. Gate Charge
Q
T
50
80
J
G
= - 40ºC
I
- NanoCoulombs
D
V
60
100
- Amperes
DS
10
70
- Volts
120
IXTA260N055T2
IXTP260N055T2
80
25ºC
140
90 100 110 120 130 140
160
IXYS REF: T_260N055T2(V6)12-15-08-B
150ºC
180
DC
200
25µs
100µs
1ms
10ms
100ms
220
100