IXTA260N055T2 IXYS, IXTA260N055T2 Datasheet - Page 2

• Manufacturer Part Number: IXTA260N055T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of IXTA260N055T2

• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 260
• Rds(on), Max, Tj=25°c, (?): 0.0033
• Ciss, Typ, (pf): 10800
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): 60
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263

Notes: 1.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
r
f
S
SM
RM
d(on)
d(off)
rr
fs
iss
oss
rss
thJC
thCH
SD
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. On Through-Hole Packages, R
Location must be 5mm or Less from the Package Body.
Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
V
V
V
TO-220
Repetitive, Pulse Width Limited by T
I
V
Resistive Switching Times
V
R
I
-di/dt = 100A/μs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
R
GS
G
= 100A, V
= 130A, V
= 27V
= 10V, I
= 0V
= 0V, V
= 2Ω (External)
= 10V, V
= 10V, V
DS
D
GS
GS
DS
DS
= 60A, Note 1
= 25V, f = 1MHz
= 0V
= 0V, Note 1
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 100A
= 0.5 • I
Kelvin Test Contact
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
55
6,162,665
6,259,123 B1
6,306,728 B1
1460
Typ.
Typ.
10.8
0.50
215
140
102
3.4
60
52
32
94
20
27
36
24
Max.
Max.
1000
0.31 °C/W
260
1.3
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
A
S
A
V
A
6,683,344
6,710,405 B2
6,710,463
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins:
6,727,585
6,759,692
6,771,478 B2 7,071,537
1 - Gate
3 - Source
IXTA260N055T2
IXTP260N055T2
7,005,734 B2 7,157,338B2
7,063,975 B2
2 - Drain
4 - Drain