IXTT2N170D2 IXYS, IXTT2N170D2 Datasheet - Page 5

• Manufacturer Part Number: IXTT2N170D2
• Description: D2 Depletion Mode Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTT2N170D2

• Vds, Max, (v): 1700
• Id(on), Min, (a): 2.0
• Rds(on), Max, (?): 6.5
• Vgs(off), Max, (v): -4.0
• Ciss, Typ, (pf): 3650
• Crss, Typ, (pf): 80
• Qg, Typ, (nc): 110
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: TO-268

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0.1
10
-1
-2
-3
-4
-5
1
6
5
4
3
2
1
0
5
4
3
2
1
0
0.3
10
0
R
T
T
Single Pulse
V
DS(on)
J
C
V
I
I
GS
= 150ºC
Fig. 13. Forward Voltage Drop of Intrinsic Diode
D
G
DS
= 25ºC
= -10V
= 1A
= 10mA
Fig. 17. Forward-Bias Safe Operating Area
= 850V
Limit
0.4
20
100
0.5
Fig. 15. Gate Charge
40
T
Q
@ T
J
G
= 125ºC
V
- NanoCoulombs
V
DS
C
SD
= 25ºC
- Volts
0.6
60
- Volts
1,000
0.7
80
DC
100µs
1ms
10ms
100ms
T
J
= 25ºC
100
0.8
10,000
120
0.9
10,000
1,000
0.001
0.1
0.01
10
100
0.4
0.1
1
10
0.00001
1
10
0
R
T
T
Single Pulse
J
C
DS(on)
Fig. 17. Maximum Transient Thermal Impedance
f
= 150ºC
= 75ºC
Fig. 16. Maximum Transient Thermal Impedance
= 1 MHz
Fig. 18. Forward-Bias Safe Operating Area
5
Limit
0.0001
10
0.001
100
Fig. 14. Capacitance
Pulse Width - Seconds
15
@ T
V
DS
V
C
hv j v
DS
= 75ºC
- Volts
0.01
20
- Volts
IXTH2N170D2
IXTT2N170D2
25
1,000
0.1
DC
30
25µs
100µs
1ms
10ms
100ms
IXYS REF: T_2N170D2(7N) 11-29-11
C oss
C rss
C iss
1
35
10,000
10
40