IXTT2N170D2 IXYS, IXTT2N170D2 Datasheet - Page 4

• Manufacturer Part Number: IXTT2N170D2
• Description: D2 Depletion Mode Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTT2N170D2

• Vds, Max, (v): 1700
• Id(on), Min, (a): 2.0
• Rds(on), Max, (?): 6.5
• Vgs(off), Max, (v): -4.0
• Ciss, Typ, (pf): 3650
• Crss, Typ, (pf): 80
• Qg, Typ, (nc): 110
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
5
4
3
2
1
0
0
0
-3.8
V
DS
= 30V
0.5
0.5
Fig. 7. Dynamic Resistance vs. Gate Voltage
T
T
Fig. 9. R
-3.6
J
J
= 25ºC
= 100ºC
1
Fig. 11. Transconductance
1
-3.4
DS(on)
vs. Drain Current
1.5
Normalized to I
T
J
1.5
I
-3.2
I
= 125ºC
D
D
V
- Amperes
- Amperes
GS
T
J
= 25ºC
2
- Volts
-3.0
2
T
2.5
J
= - 40ºC
D
= 1A Value
∆
-2.8
2.5
V
25ºC
DS
125ºC
V
3
GS
= 1300V - 300V
= 0V
5V
-2.6
3
3.5
- - - -
-2.4
3.5
4
2.8
2.4
2.0
1.6
1.2
0.8
0.4
2.5
1.5
0.5
1.3
1.2
1.1
1.0
0.9
0.8
3
2
1
0
-50
-50
-3
Fig. 8. Normalized R
V
V
I
DS
D
GS
Fig. 12. Normalized Breakdown and Threshold
= 1A
-25
-25
= 30V
= 0V
-2.5
Voltages vs. Junction Temperature
0
0
Fig. 10. Input Admittance
-2
T
T
J
J
25
25
- Degrees Centigrade
- Degrees Centigrade
DS(on)
V
GS
V
-1.5
- Volts
GS(off)
50
50
vs. Junction Temperature
@ V
T
J
DS
IXTH2N170D2
75
= 125ºC
IXTT2N170D2
75
- 40ºC
= 25V
BV
25ºC
-1
DSX
@ V
100
100
GS
-0.5
= - 5V
125
125
150
150
0