IXFM10N90 IXYS, IXFM10N90 Datasheet - Page 4

• Manufacturer Part Number: IXFM10N90
• Description: Standard HiperFETs (50V to 1200V)
• Manufacturer: IXYS

Specifications of IXFM10N90

• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 10
• Rds(on), Max, Tj=25°c, (?): 1.1
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 123
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-204

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
10
0.00001
8
6
4
2
0
0
1
0
0
Fig.7. Gate Charge Characteristic Curve
Fig.10. Transient Thermal Impedance
D=0.05
D=0.2
D=0.5
D=0.1
D=0.02
D=0.01
Fig.8. Capacitance Curves
Single Pulse
V
I
I
D
G
DS
= 13A
= 10mA
25
= 450V
5
Gate Charge - nCoulombs
50
C
C
C
iss
oss
rss
0.0001
10
V
f = 1 MHz
V
CE
DS
75
- Volts
= 25V
15
100
20
125
0.001
150
IXFH 10N90
IXFM 10N90
25
Pulse Width - Seconds
4,835,592
4,850,072
0.01
4,881,106
4,931,844
18
16
14
12
10
8
6
4
2
0
0.0
Fig.9. Source Current vs. Source
IXFH 12N90
IXFM 12N90
5,017,508
5,034,796
0.2
0.1
to Drain Voltage
T
J
= 125°C
0.4
5,049,961
5,063,307
0.6
V
SD
- Volts
0.8
5,187,117
5,237,481
T
1
J
= 25°C
1.0
IXFH 13N90
IXFT 13N90
1.2
5,486,715
5,381,025
1.4
6,306,728B1
10