IXFM10N90 IXYS, IXFM10N90 Datasheet

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IXFM10N90

Manufacturer Part Number
IXFM10N90
Description
Standard HiperFETs (50V to 1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXFM10N90

Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
1.1
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
123
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-204
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
L
GSM
AR
J
stg
DSS
DGR
GS
D
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t
V
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
150 C, R
I
DM
rr
TM
, di/dt 100 A/ s, V
GS
, HDMOS
DSS
, I
D
D
DC
D
= 3 mA
= 4 mA
, V
G
= 0.5 • I
300 s, duty cycle d
= 2
DS
= 0
TM
D25
GS
Family
JM
= 1 M
DD
T
T
(T
J
J
= 25 C
= 125 C
J
V
10N90
12N90
13N90
= 25 C, unless otherwise specified)
DSS
,
2 %
TO-204 = 18 g, TO-247 = 6 g
IXFH/IXFM 10 N90
IXFH/IXFM 12 N90
IXFH/IXFT 13 N90
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
min.
900
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
900
900
300
150
300
20
30
10
12
13
40
48
52
10
12
13
30
5
max.
100
4.5
1.1
0.9
0.8
25
1
V/ns
mJ
mA
nA
W
V
V
V
V
A
A
A
A
A
A
A
A
A
V
V
C
C
C
C
A
TO-247 AD (IXFH)
TO-204 AA (IXFM)
Features
Applications
Advantages
TO-268 (IXFT)
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
900 V
900 V
900 V
t
rr
V
G = Gate,
S = Source,
DSS
DS (on)
250 ns
G
HDMOS
E
10 A
12 A
13 A
I
D25
D
D = Drain,
TAB = Drain
TM
DS91530I(01/03)
process
G
R
1.1
0.9
0.8
DS(on)
C (TAB)
(TAB)

Related parts for IXFM10N90

IXFM10N90 Summary of contents

Page 1

... DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH/IXFT 13 N90 Family Maximum Ratings 900 = 1 M 900 10N90 10 12N90 12 13N90 13 10N90 40 12N90 48 ...

Page 2

... V = 100 TO-268 (IXFT) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXFH 10N90 IXFM 10N90 Characteristic Values ( unless otherwise specified) J min. typ. max. ...

Page 3

... Fig. 5. Drain Current vs. Case Temperature 12N90 12 10 10N90 -50 - Degrees C C © 2003 IXYS All rights reserved IXFH 10N90 IXFM 10N90 Fig. 2. Input Admittance 10V Fig ...

Page 4

... Fig.10. Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXFH 10N90 IXFM 10N90 100 125 150 0.001 0.01 ...

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