IXFK72N20 IXYS, IXFK72N20 Datasheet - Page 2

• Manufacturer Part Number: IXFK72N20
• Description: Standard HiperFETs (50V to 1200V)
• Manufacturer: IXYS

Specifications of IXFK72N20

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 72
• Rds(on), Max, Tj=25°c, (?): 0.035
• Ciss, Typ, (pf): 5900
• Qg, Typ, (nc): 280
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 357
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-264

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Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
SM
RM
d(on)
d(off)
f
r
rr
fs
oss
thJC
thCK
SD
iss
rss
g(on)
gs
gd
RM
V
V
Repetitive; pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
F
DS
GS
= I
= 0 V
Test Conditions
Test Conditions
I
S
F
, V
V
V
R
V
= I
GS
GS
G
GS
GS
S
= (External),
= 10 V; I
, -di/dt = 100 A/ms, V
= 10 V, V
= 0 V,
= 0 V, V
= 10 V, V
D
= 0.5 • I
DS
= 0.5 • V
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
D25
, pulse test
R
DSS
= 100 V
, I
JM
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
DSS
D
(T
(T
= 0.5 • I
, I
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
72N20
80N20
72N20
80N20
D
= 0.5 • I
D25
4,881,106
4,931,844
D25
min.
min.
35
Characteristic Values
Characteristic Values
5,017,508
5,034,796
5900
1140
typ.
typ.
0.15
480
120
280
120
1.2
10
42
40
55
26
39
0.35
max.
max.
288
320
200
5,049,961
5,063,307
1.5
72
80
IXFK72N20
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
mC
ns
S
A
A
A
A
V
A
5,187,117
5,237,481
TO-264 AA Outline
5,486,715
5,381,025
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
25.91
19.81
20.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Millimeter
5.46 BSC
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
IXFK80N20
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
Inches
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
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