IXFK72N20 IXYS, IXFK72N20 Datasheet

IXFK72N20

Manufacturer Part Number

IXFK72N20

Description

Standard HiperFETs (50V to 1200V)

Manufacturer

IXYS

Datasheet

1.IXFK72N20.pdf (4 pages)

Specifications of IXFK72N20

Vdss, Max, (v)

200

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.035

Ciss, Typ, (pf)

5900

Qg, Typ, (nc)

280

Trr, Typ, (ns)

Trr, Max, (ns)

200

Pd, (w)

357

Rthjc, Max, (ºc/w)

0.35

Package Style

TO-264

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFK72N20

Manufacturer:

IXYS

Quantity:

200

Current page: 1 of 4
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HiPerFET

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

Symbol

dv/dt

Weight

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

GSS

DSS

D25

stg

DSS

DGR

GSM

DSS

GS(th)

DS(on)

Test Conditions

Pulse test, t £ 300 ms, duty cycle d £ 2 %

Test Conditions

Continuous

Transient

pulse width limited by T

1.6 mm (0.063 in) from case for 10 s

Mounting torque

£ 150°C, R

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C,

= 25°C

£ I

= 25°C

= 0 V, I

= V

= ±20 V

= 0.8 • V

= 0 V

= 10 V,I

, di/dt £ 100 A/ms, V

, I

= 1 mA

DSS

= 4 mA

= 0.5 • I

, V

= 2 W

= 0

D25

= 1 MW

72N20

80N20

£ V

= 25°C

= 125°C

72N20

80N20

72N20

80N20

DSS

= 25°C, unless otherwise specified)

-55 ... +150

min.

200

Characteristic Values

300 -

0.9/6

Maximum Ratings

200

±20

±30

288

320

360

150

typ.

IXFK72N20

IXFK80N20

max.

±100

200

Nm/lb.in.

V/ns

°C

TO-264 AA

G = Gate

S = Source

Features

• International standard packages

• Molding epoxies meet UL 94 V-0

• Low R

• Unclamped Inductive Switching (UIS)

• Fast intrinsic rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

rated

flammability classification

power supplies

200 V

DSS

DS (on)

£ 200 ns

HDMOS

72 A 35 mW

80 A 30 mW

D25

D = Drain

TAB = Drain

process

97523C (07/00)

DS(on)

(TAB)

1 - 4

Related parts for IXFK72N20

IXFK72N20 Summary of contents

Page 1

... V,I = 0.5 • I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFK72N20 IXFK80N20 rr Maximum Ratings 200 = 1 MW 200 GS ±20 ±30 72N20 72 80N20 80 72N20 ...

Page 2

... J min. typ. max. 72N20 80N20 72N20 JM 80N20 = 100 V 1 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFK72N20 IXFK80N20 TO-264 AA Outline Dim. Millimeter Min. Max. A 4.82 5. 2.54 2 ...

Page 3

... Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved = 10V = 150 200 250 value D25 IXFK80N20 75 100 125 150 IXFK72N20 IXFK80N20 200 T = 125 160 120 Volts DS Figure 2. Output Characteristics at 125 2 10V GS 2.0 ...

Page 4

... Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 10000 1000 100 250 300 350 300 1.6 2 Pulse Width - Seconds IXFK72N20 IXFK80N20 Ciss f = 1MHz Coss Crss Volts DS Figure 8. Capacitance Curves ...

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