IXTH3N150 IXYS, IXTH3N150 Datasheet - Page 4

• Manufacturer Part Number: IXTH3N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTH3N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 3
• Rds(on), Max, Tj=25°c, (?): 7.3
• Ciss, Typ, (pf): 1375
• Qg, Typ, (nc): 38.6
• Trr, Typ, (ns): 900
• Pd, (w): 250
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
10
0.1
0.00001
8
6
4
2
0
7
6
5
4
3
2
1
0
1
0
0
V
I
I
D
G
Fig. 11. Maximum Transient Thermal Impedance
DS
= 1.5A
= 10mA
= 750V
5
0.5
0.0001
10
1
Fig. 7. Transconductance
0.001
Fig. 9. Gate Charge
Pulse Width - Seconds
15
Q
G
1.5
I
- NanoCoulombs
D
- Amperes
0.01
20
2
25
0.1
T
2.5
J
= - 40ºC
30
125ºC
25ºC
1
3
35
10
3.5
40
10,000
1,000
100
0.01
10
0.1
10
9
8
7
6
5
4
3
2
1
0
1
0.3
0
10
f
R
= 1 MHz
DS(on)
T
T
Single Pulse
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 12. Forward-Bias Safe Operating Area
J
C
5
= 150ºC
= 25ºC
0.4
Limit
10
0.5
100
Fig. 10. Capacitance
15
T
0.6
J
V
V
= 125ºC
SD
DS
V
20
DS
- Volts
- Volts
C oss
C rss
C iss
- Volts
0.7
IXTH3N150
25
1,000
DC
0.8
30
25µs
100µs
1ms
10ms
100ms
T
J
IXYS REF: T_3N150(4N)10-26-10-A
= 25ºC
0.9
35
10,000
1.0
40