IXTH3N150 IXYS, IXTH3N150 Datasheet - Page 3

• Manufacturer Part Number: IXTH3N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTH3N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 3
• Rds(on), Max, Tj=25°c, (?): 7.3
• Ciss, Typ, (pf): 1375
• Qg, Typ, (nc): 38.6
• Trr, Typ, (ns): 900
• Pd, (w): 250
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-247

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4.5
3.5
2.5
1.5
0.5
3.5
2.5
1.5
0.5
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
4
3
2
1
0
3
2
1
0
-50
-50
0
V
GS
Fig. 3. R
-25
-25
= 10V
4
Fig. 1. Output Characteristics @ T
Fig. 5. Maximum Drain Current vs.
DS(on)
8
0
0
Junction Temperature
Normalized to I
T
T
Case Temperature
C
J
12
25
25
- Degrees Centigrade
- Degrees Centigrade
V
DS
- Volts
16
50
50
V
GS
D
20
75
75
= 10V
= 1.5A Value vs.
I
D
7V
= 3A
J
100
100
24
= 25ºC
6V
5.5V
5V
4V
I
D
125
125
28
= 1.5A
150
150
32
2.5
1.5
0.5
2.5
1.5
0.5
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
3
2
1
0
3
2
1
0
3.2
0
0
V
GS
0.5
Fig. 4. R
= 10V
5
3.6
Fig. 2. Output Characteristics @ T
1
10
DS(on)
4.0
Fig. 6. Input Admittance
1.5
Normalized to I
15
Drain Current
4.4
I
V
V
D
2
GS
T
DS
- Amperes
J
= 125ºC
- Volts
20
- Volts
2.5
4.8
T
IXTH3N150
J
D
25
= 125ºC
= 1.5A Value vs.
25ºC
V
3
GS
T
5.2
J
= 10V
J
= 25ºC
6V
30
= 125ºC
3.5
5V
4V
5.6
- 40ºC
35
4
4.5
6.0
40