AP04N70BI Advanced Power Electronics Corp., AP04N70BI Datasheet - Page 5

• Manufacturer Part Number: AP04N70BI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP04N70BI

• Vds: 600V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 2400
• Qg (nc): 16.7
• Qgs (nc): 4.1
• Qgd (nc): 4.9
• Id(a): 4
• Pd(w): 33
• Configuration: Single N
• Package: TO-220CFM

100
0.1
16
14
12
10
10
8
6
4
2
0
1
0
0
Fig 9. Gate Charge Characteristics
I
Fig 11. Forward Characteristic of
D
0.2
=4A
5
T
V
j
0.4
Q
DS
=150
G
V
=320V
Reverse Diode
, Total Gate Charge (nC)
DS
V
o
=400V
0.6
C
DS
10
=480V
V
SD
0.8
(V)
15
T
1
j
= 25
1.2
o
C
20
1.4
1.6
25
10000
100
Fig 10. Typical Capacitance Characteristics
1
5
4
3
2
1
0
-50
1
Fig 12. Gate Threshold Voltage v.s.
6
T
j
Junction Temperature
0
, Junction Temperature (
11
V
DS
50
16
(V)
AP04N70BI
21
o
100
C )
f=1.0MHz
Coss
26
Ciss
Crss
150
31
5