AP04N70BI Advanced Power Electronics Corp., AP04N70BI Datasheet - Page 4

• Manufacturer Part Number: AP04N70BI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP04N70BI

• Vds: 600V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 2400
• Qg (nc): 16.7
• Qgs (nc): 4.1
• Qgd (nc): 4.9
• Id(a): 4
• Pd(w): 33
• Configuration: Single N
• Package: TO-220CFM

AP04N70BI
0.01
100
0.1
10
4.5
3.5
2.5
1.5
0.5
1
4
3
2
1
0
1
25
Fig 7. Maximum Safe Operating Area
Fig 5. Maximum Drain Current v.s.
T
Single Pulse
c
=25
50
Case Temperature
o
T
C
c
, Case Temperature (
10
75
V
DS
(V)
100
100
o
C )
125
100ms
100us
10ms
1ms
DC
1s
1000
150
Fig 8. Effective Transient Thermal Impedance
0.01
0.1
40
30
20
10
0.00001
1
0
0
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Fig 6. Typical Power Dissipation
0.0001
T
c ,
t , Pulse Width (s)
0.001
Case Temperature (
50
0.01
P
100
0.1
DM
Duty factor = t/T
Peak T
o
C )
j
= P
t
DM
T
x R
1
thjc
+ T
C
150
10
4