AP10P10GH-HF Advanced Power Electronics Corp., AP10P10GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP10P10GH-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP10P10GH-HF

• Vds: -100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 500
• Rds(on) / Max(m?) Vgs@4.5v: 600
• Qg (nc): 6
• Qgs (nc): 1.5
• Qgd (nc): 3.2
• Id(a): -4.6
• Pd(w): 20.8
• Configuration: Single P
• Package: TO-252

AP10P10GH/J-HF
100
0.1
10
10
8
6
4
2
0
1
5
4
3
2
1
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
Fig 9. Maximum Safe Operating Area
V
Operation in this area
limited by R
DS
I
V
1
Single Pulse
D
T
DS
= -5V
-V
= -3A
C
T
2
= -80V
-V
=25
DS(ON)
DS
j
Q
1
=-40
2
GS
G
, Drain-to-Source Voltage (V)
o
C
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
o
C
3
4
T
10
j
4
=25
T
j
=150
o
6
C
5
o
C
100
6
100ms
100us
10ms
1ms
DC
8
7
1000
10
8
Fig 10. Effective Transient Thermal Impedance
600
500
400
300
200
100
Fig 12. Maximum Continuous Drain Current
0.01
0
0.1
0.00001
8
6
4
2
0
1
1
Fig 8. Typical Capacitance Characteristics
25
0.02
0.2
0.1
0.05
0.01
Duty factor=0.5
Single Pulse
5
0.0001
-V
v.s. Case Temperature
50
DS
T
9
C
, Drain-to-Source Voltage (V)
, Case Temperature (
t , Pulse Width (s)
0.001
75
13
17
0.01
100
P
DM
Duty factor = t/T
Peak T
21
o
C )
j
= P
t
125
0.1
f=1.0MHz
DM
T
x R
25
thjc
C
C
+ T
C
iss
C
oss
rss
150
29
1
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