AP10P10GH-HF Advanced Power Electronics Corp., AP10P10GH-HF Datasheet
AP10P10GH-HF
Specifications of AP10P10GH-HF
Related parts for AP10P10GH-HF
AP10P10GH-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP10P10GH/J-HF Halogen-Free Product BV -100V D DSS R 500mΩ DS(ON) I -5. TO-252(H) ...
Page 2
... AP10P10GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
... G 2.0 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance 2 -250uA D 1 0.5 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP10P10GH/J-HF -10V . . Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...
Page 4
... AP10P10GH/J- - -80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area -5V T =150 ...