AP9990GP-HF Advanced Power Electronics Corp., AP9990GP-HF Datasheet - Page 3
![The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
The TO-220 package is widely preferred for commercial-industrial power applicat](/photos/42/42/424241/1061s_sml.png)
AP9990GP-HF
Manufacturer Part Number
AP9990GP-HF
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
The TO-220 package is widely preferred for commercial-industrial power applicat
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP9990GP-HF.pdf
(4 pages)
Specifications of AP9990GP-HF
Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Qg (nc)
59
Qgs (nc)
14
Qgd (nc)
29.5
Id(a)
100
Pd(w)
125
Configuration
Single N
Package
TO-220CFM
300
250
200
150
100
1.2
1.1
0.9
0.8
50
40
30
20
10
0
0
1
0.0
-50
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
4.0
0.2
Temperature
V
Reverse Diode
T
0
DS
V
C
T
SD
=25
, Drain-to-Source Voltage (V)
j
T
, Source-to-Drain Voltage (V)
, Junction Temperature (
8.0
0.4
j
o
=175
C
50
o
C
12.0
0.6
DSS
100
16.0
0.8
v.s. Junction
T
V
j
o
20.0
=25
150
C)
G
1
= 6.0V
o
9.0V
8.0V
7.0V
10V
C
24.0
1.2
200
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
160
120
80
40
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=40A
=10V
v.s. Junction Temperature
V
0
0
Junction Temperature
T
4.0
DS
T
j
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
50
50
8.0
T
AP9990GP-HF
C
=175
100
100
o
C
12.0
o
150
150
o
V
C )
C)
G
=6.0V
9.0V
8.0V
7.0V
10V
16.0
200
200
3