AP9990GP-HF Advanced Power Electronics Corp., AP9990GP-HF Datasheet - Page 2
![The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
The TO-220 package is widely preferred for commercial-industrial power applicat](/photos/42/42/424241/1061s_sml.png)
AP9990GP-HF
Manufacturer Part Number
AP9990GP-HF
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
The TO-220 package is widely preferred for commercial-industrial power applicat
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP9990GP-HF.pdf
(4 pages)
Specifications of AP9990GP-HF
Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Qg (nc)
59
Qgs (nc)
14
Qgd (nc)
29.5
Id(a)
100
Pd(w)
125
Configuration
Single N
Package
TO-220CFM
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
AP9990GP-HF
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
=25
o
C(unless otherwise specified)
2
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=40A
=40A
=40A, V
=10A,
=0.75Ω
=1Ω,V
=0V, I
=10V, I
=V
=10V, I
=48V, V
= +20V, V
=48V
=10V
=30V
=0V
=25V
GS
Test Conditions
Test Conditions
V
, I
GS
D
GS
GS
D
=250uA
D
D
=10V
=250uA
GS
=40A
=0V
=40A
=0
DS
=0V
V
=0V
,
Min.
Min.
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2320 3700
Typ.
29.5
Typ.
450
280
1.3
55
59
14
14
76
25
12
41
58
-
-
-
-
-
-
+100
Max. Units
Max. Units
1.3
94
25
6
5
-
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
uA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
nC
V
V
S
Ω
V
2