AP9977GM Advanced Power Electronics Corp., AP9977GM Datasheet - Page 3

• Manufacturer Part Number: AP9977GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9977GM

• Vds: 60V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 100
• Rds(on) / Max(m?) Vgs@4.5v: 125
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 3.3
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

100
25
20
15
10
90
80
70
5
0
4
3
2
1
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
= 25
T
0.2
V
V
V
Reverse Diode
j
=150
DS
o
SD
GS
C
2
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
0.4
C
0.6
4
6
I
T
D
A
= 2 A
=25
0.8
℃
T
6
8
V
j
=25
G
=3.0V
1
7.0 V
5.0V
4.5V
10V
o
C
1.2
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
25
20
15
10
1.8
1.5
1.2
0.9
0.6
0.3
5
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
T
D
G
A
= 3 A
=10V
= 150
V
v.s. Junction Temperature
Junction Temperature
T
T
DS
j
j
2
, Junction Temperature (
0
0
, Junction Temperature (
o
, Drain-to-Source Voltage (V)
C
4
50
50
AP9977GM
o
o
6
100
100
C)
C)
V
G
=3.0V
7.0V
5.0V
4.5V
10V
8
150
150
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