AP9977GM Advanced Power Electronics Corp., AP9977GM Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness

AP9977GM

Manufacturer Part Number
AP9977GM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9977GM

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
100
Rds(on) / Max(m?) Vgs@4.5v
125
Qg (nc)
6
Qgs (nc)
2
Qgd (nc)
3
Id(a)
3.3
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9977GM
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP9977GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
D1
3
3
D2
D2
S1
G1
S2
G2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
RoHS-compliant Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
±25
3.3
2.7
60
20
DS(ON)
2
DSS
Value
D1
S1
62.5
G2
AP9977GM
201108073-1/4
100mΩ
3.3A
Units
W/℃
℃/W
60V
Unit
W
V
V
A
A
A
S2
D2

Related parts for AP9977GM

AP9977GM Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP9977GM RoHS-compliant Product BV 60V DSS R 100mΩ DS(ON Rating Units 60 ±25 3.3 2 0.016 W/℃ ...

Page 2

... AP9977GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V G 1.8 1.6 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1.5 1.2 o =25 C 0.9 0.6 0.3 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9977GM o C 10V 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( 150 ...

Page 4

... AP9977GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9977GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW: ...

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