AP9974GP Advanced Power Electronics Corp., AP9974GP Datasheet - Page 4

• Manufacturer Part Number: AP9974GP
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9974GP

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 43
• Qgs (nc): 8
• Qgd (nc): 31
• Id(a): 72
• Pd(w): 104
• Configuration: Single N
• Package: TO-220

AP9974GS/P
1000
100
125
100
10
16
12
75
50
25
1
0
8
4
0
0.1
Fig 9. Maximum Safe Operating Area
0
0
Fig 7. Gate Charge Characteristics
Fig 11. Transfer Characteristics
V
I
DS
D
Single Pulse
=5V
= 35 A
T
C
V
=25
DS
V
20
Q
1
2
V
V
V
GS
G
, Drain-to-Source Voltage (V)
o
DS
DS
DS
C
T
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
=48V
=38V
=30V
j
=25
o
C
10
40
4
T
j
=150
100ms
100us
100
60
10ms
6
1ms
DC
o
C
1000
80
8
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
Fig 8. Typical Capacitance Characteristics
1
1
Fig 12. Gate Charge Waveform
4.5V
V
0.01
0.02
Duty factor=0.5
G
0.05
Single Pulse
0.2
0.1
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
T
0.1
x R
f=1.0MHz
thjc
25
+ T
C
Q
C
C
C
iss
rss
oss
1
29