AP9974GP Advanced Power Electronics Corp., AP9974GP Datasheet - Page 3

• Manufacturer Part Number: AP9974GP
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9974GP

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 43
• Qgs (nc): 8
• Qgd (nc): 31
• Id(a): 72
• Pd(w): 104
• Configuration: Single N
• Package: TO-220

250
200
150
100
50
20
16
12
30
20
10
0
8
0
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
T
C
=25
0.2
Reverse Diode
o
V
C
V
T
V
GS
2
DS
4
j
SD
=150
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
o
C
0.6
4
6
0.8
T
I
T
C
D
8
6
V
=25
= 30 A
j
=25
G
1
=3.0V
7.0V
5.0V
4.5V
o
10V
o
C
C
1.2
10
8
2.0
1.6
1.2
0.8
0.4
125
100
1.8
1.2
0.6
0.0
75
50
25
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
I
D
G
=45A
=10V
Junction Temperature
v.s. Junction Temperature
T
V
T
2
0
0
j
DS
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
C
= 150
50
50
4
AP9974GS/P
o
C
100
100
6
o
o
C)
V
C)
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
8