AP9973GD Advanced Power Electronics Corp., AP9973GD Datasheet - Page 4

• Manufacturer Part Number: AP9973GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9973GD

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 100
• Qg (nc): 8
• Qgs (nc): 2
• Qgd (nc): 4
• Id(a): 3.9
• Pd(w): 2
• Configuration: Dual N
• Package: PDIP-8

AP9973GD
0.01
100
0.1
10
14
12
10
1
8
6
4
2
0
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
V
90%
10%
Single Pulse
V
T
DS
I
GS
5
A
D
V
=25
=3.9A
DS
Q
o
1
, Drain-to-Source Voltage (V)
10
G
t
C
d(on)
, Total Gate Charge (nC)
V
V
V
15
DS
DS
DS
t
r
=48V
=38V
=30V
10
20
25
t
d(off)
100
30
10ms
10ms
1ms
DC
t
1s
f
35
1000
40
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
10
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
Duty factor=0.5
Single Pulse
G
0.001
0.02
0.01
5
0.05
0.1
0.2
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
G
Charge
GD
17
1
P
DM
Duty factor = t/T
Peak T
Rthja= 90℃/W
21
10
t
j
= P
f=1.0MHz
DM
T
x R
100
thja
25
+ T
Q
Coss
Crss
a
Ciss
1000
29
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