AP9973GD Advanced Power Electronics Corp., AP9973GD Datasheet
AP9973GD
Manufacturer Part Number
AP9973GD
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness
... AP9973GD Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
... I =3.9A D =3. =10V o G =25 C 2.0 A 1.5 1.0 0.5 0.0 11 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 0.5 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9973GD 10V 6. 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ,Junction Temperature ( ...
... AP9973GD 14 I =3. =48V DS V =38V =30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...