AP4951GM Advanced Power Electronics Corp., AP4951GM Datasheet - Page 4

• Manufacturer Part Number: AP4951GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4951GM

• Vds: -60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 96
• Rds(on) / Max(m?) Vgs@4.5v: 120
• Qg (nc): 29.5
• Qgs (nc): 3
• Qgd (nc): 7
• Id(a): -3.4
• Pd(w): 2
• Configuration: Dual P
• Package: SO-8

AP4951GM
0.01
100
0.1
20
16
12
16
12
10
8
4
0
8
4
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
DS
Single Pulse
= -5V
T
-V
A
-V
=25
GS
DS
Q
10
o
, Gate-to-Source Voltage (V)
G
V
C
, Drain-to-Source Voltage (V)
I
DS
, Total Gate Charge (nC)
2
D
1
= -3A
= -48V
T
j
=25
20
o
C
4
10
T
j
=150
30
o
C
100ms
100us
10ms
1ms
DC
1s
100
6
40
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
10
0.1
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
-10V
Fig 12. Gate Charge Waveform
0.02
0.05
0.01
V
0.1
Duty factor = 0.5
Single Pulse
G
0.2
5
0.001
-V
Q
DS
GS
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.01
Q
Q
13
G
Charge
GD
0.1
17
P
1
DM
Duty Factor = t/T
Peak T
R
thja
21
=135
j
= P
t
o
f=1.0MHz
C/W
DM
T
x R
10
25
thja
C
C
+ T
C
Q
oss
rss
a
iss
100
29
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