AP4951GM Advanced Power Electronics Corp., AP4951GM Datasheet - Page 2

• Manufacturer Part Number: AP4951GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4951GM

• Vds: -60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 96
• Rds(on) / Max(m?) Vgs@4.5v: 120
• Qg (nc): 29.5
• Qgs (nc): 3
• Qgd (nc): 7
• Id(a): -3.4
• Pd(w): 2
• Configuration: Dual P
• Package: SO-8

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
Electrical Characteristics@T
Source-Drain Diode
t
Notes:
AP4951GM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=-3A
=-1A
G
D
=-2.1A, V
=-3A,
=30Ω
=3.3Ω,V
=V
=-10V, I
=-60V, V
=-48V, V
=-48V
=-30V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=±20V
=-10V
=0V
GS
V
Test Conditions
Test Conditions
, I
GS
D
D
=-250uA
GS
=-250uA
D
GS
D
=0
D
GS
GS
=-3.4A
=-3.4A
=-2.7A
=0V
=-10V
V
=0V
=0V
,
D
=-1mA
Min.
Min.
-60
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1320
-0.04
29.5
10.5
Typ.
Typ.
125
3.4
11
39
95
39
64
3
7
5
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
-1.2
120
-25
96
20
10
80
20
80
-3
-1
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2/4