AP4578GM-HF Advanced Power Electronics Corp., AP4578GM-HF Datasheet - Page 6

• Manufacturer Part Number: AP4578GM-HF
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4578GM-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 64
• Rds(on) / Max(m?) Vgs@4.5v: 80
• Qg (nc): 9
• Qgs (nc): 3
• Qgd (nc): 4
• Id(a): 4.5
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4578GM-HF
170
160
150
140
130
20
15
10
5
0
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
Fig 5. Forward Characteristic of
T
A
= 25
1
0.2
-V
-V
T
Reverse Diode
-V
j
o
DS
GS
=150
SD
C
4
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2
, Source-to-Drain Voltage (V)
0.4
o
C
3
0.6
6
4
0.8
T
I
5
A
D
T
=25
V
= -2 A
8
j
G
=25
= - 3.0V
o
1
6
C
-7.0V
-5.0V
-4.5V
o
-10V
C
1.2
7
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
15
10
1.5
0.5
5
0
2
1
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
T
G
D
A
= - 10V
= -3 A
=150
1
-V
v.s. Junction Temperature
Junction Temperature
DS
T
o
T
0
0
C
j
, Drain-to-Source Voltage (V)
2
j
, Junction Temperature (
, Junction Temperature (
3
50
50
4
5
100
100
o
V
o
C)
G
C)
= - 3.0V
6
-7.0V
-5.0V
-4.5V
-10V
150
150
7
6