AP4578GM-HF Advanced Power Electronics Corp., AP4578GM-HF Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4578GM-HF

Manufacturer Part Number
AP4578GM-HF
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4578GM-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
64
Rds(on) / Max(m?) Vgs@4.5v
80
Qg (nc)
9
Qgs (nc)
3
Qgd (nc)
4
Id(a)
4.5
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4578GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
D1
D1
D1
SO-8
SO-8
3
3
D2
D2
D2
D2
S1
S1
G1
G1
S2
S2
G2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
±20
G1
60
4.5
3.6
20
Halogen-Free Product
-55 to 150
-55 to 150
Rating
2.0
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
AP4578GM-HF
DSS
DSS
Value
62.5
D1
S1
-2.4
±20
-60
-20
-3
G2
125mΩ
200805191
64mΩ
-60V
4.5A
Units
℃/W
60V
-3A
Unit
W
V
V
A
A
A
D2
S2
1

Related parts for AP4578GM-HF

AP4578GM-HF Summary of contents

Page 1

... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO-8 S1 N-channel Parameter 3 AP4578GM-HF Halogen-Free Product N-CH BV 60V DSS R 64mΩ DS(ON) I 4.5A D P-CH BV -60V DSS R 125mΩ DS(ON Rating Units P-channel ...

Page 2

... AP4578GM-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =- =-48V DS V =-4. =-30V =3.3Ω, =30Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-3A dI/dt=-100A/µs AP4578GM-HF Min. Typ. -60 - =-1mA - -0.04 D =-3A - 100 D =-2A - 120 =- = = =-10V ...

Page 4

... AP4578GM-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 0.1 100us 1ms 10ms 0.01 100ms 1s DC 0.001 100 1000 0.0001 Fig 10. Effective Transient Thermal Impedance o =125 Fig 12. Gate Charge Waveform AP4578GM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 0.01 Duty factor = t/T ...

Page 6

... AP4578GM-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 170 160 150 140 130 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 0.1 100us 1ms 10ms 0.01 100ms 1s DC 0.001 0.0001 100 1000 Fig 10. Effective Transient Thermal Impedance o =150 Fig 12. Gate Charge Waveform AP4578GM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

Page 8

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4578GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number meet Rohs requirement for low voltage MOSFET only ...

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