AP4569GM Advanced Power Electronics Corp., AP4569GM Datasheet - Page 6

• Manufacturer Part Number: AP4569GM
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4569GM

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 7
• Qgs (nc): 1.2
• Qgd (nc): 3.4
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4569GM
170
140
110
20
15
10
80
50
5
0
10
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
0.2
-V
Reverse Diode
-V
-V
GS
DS
SD
2
4
, Gate-to-Source Voltage (V)
0.4
T
, Drain-to-Source Voltage (V)
T
, Source-to-Drain Voltage (V)
j
=150
A
=25
0.6
o
o
C
C
4
6
T
0.8
I
A
D
=25
= -2 A
T
o
1
j
C
=25
6
8
V
G
o
C
= - 3.0V
1.2
- 7.0V
- 5.0V
- 4.5V
- 10V
1.4
8
10
100.0
80.0
60.0
40.0
1.8
1.4
1.0
0.6
20
15
10
5
0
0
25
0
Fig 6. On-Resistance vs.
Fig 2. Typical Output Characteristics
V
Fig 4. Normalized On-Resistance
T
I
G
D
A
= - 10V
= -4 A
= 150
Drain Current
-V
v.s. Junction Temperature
50
o
DS
C
T
5
V
V
j
, Drain-to-Source Voltage (V)
-I
GS
GS
, Junction Temperature (
D
2
= -4.5V
= -10V
, Drain Current (A)
75
10
100
4
15
V
o
125
G
C)
= - 3.0V
- 7.0V
- 5.0V
- 4.5V
- 10V
6
150
20
6/7