AP4569GM Advanced Power Electronics Corp., AP4569GM Datasheet - Page 4

• Manufacturer Part Number: AP4569GM
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4569GM

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 7
• Qgs (nc): 1.2
• Qgd (nc): 3.4
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4569GM
80
60
40
20
20
15
10
5
0
10
2
8
6
4
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
Fig 5. Forward Characteristic of
0.2
V
Reverse Diode
V
V
DS
SD
GS
4
2
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
, Gate-to-Source Voltage (V)
A
0.4
=25
T
j
o
=150
C
6
0.6
4
T
o
I
C
A
D
=25
=3A
0.8
o
C
6
8
T
V
j
1
=25
G
=3.0V
7.0V
5.0V
4.5V
10V
o
C
1.2
8
10
60.0
40.0
20.0
20
15
10
2.0
1.6
1.2
0.8
5
0
25
0
0
Fig 2. Typical Output Characteristics
Fig 6. On-Resistance vs.
Fig 4. Normalized On-Resistance
V
I
G
D
=10V
=5A
Drain Current
T
v.s. Junction Temperature
V
50
1
j
DS
, Junction Temperature (
5
, Drain-to-Source Voltage (V)
V
I
V
GS
D
GS
, Drain Current (A)
=4.5V
75
2
=10V
T
A
= 150
10
100
o
3
C
o
C)
15
125
4
V
G
7.0V
5.0V
4.5V
=3.0V
10V
150
5
20
4/7