AP4526GH Advanced Power Electronics Corp., AP4526GH Datasheet - Page 6

• Manufacturer Part Number: AP4526GH
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4526GH

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 52
• Qg (nc): 7.7
• Qgs (nc): 1.5
• Qgd (nc): 4.5
• Id(a): 7.6
• Pd(w): 3.125
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
AP4526GH
50
46
42
38
34
30
40
30
20
10
0
10
2
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0.1
Fig 5. Forward Characteristic of
T
C
= 25
0.3
1
o
Reverse Diode
T
-V
C
-V
-V
j
4
=150
SD
GS
DS
0.5
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
2
, Drain-to-Source Voltage (V)
o
C
0.7
6
3
T
I
D
C
0.9
=25
= -3 A
T
j
=25
4
o
C
1.1
o
8
C
V
G
5
= - 3.0V
1.3
-7.0V
-5.0V
-4.5V
-10V
10
1.5
6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
V
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
T
G
D
C
= -10V
= -5A
= 150
1
T
v.s. Junction Temperature
Junction Temperature
-V
j
o
T
, Junction Temperature (
DS
C
0
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
3
50
50
4
o
C)
100
100
o
V
C)
G
5
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
6
150
150
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