AP4526GH Advanced Power Electronics Corp., AP4526GH Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4526GH

Manufacturer Part Number
AP4526GH
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4526GH

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
32
Rds(on) / Max(m?) Vgs@4.5v
52
Qg (nc)
7.7
Qgs (nc)
1.5
Qgd (nc)
4.5
Id(a)
7.6
Pd(w)
3.125
Configuration
Complementary N-P
Package
TO-252-4L
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Thermal Resistance Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Parameter
Parameter
1
S1
3
3
G1
S2
G2
TO-252-4L
3
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
G1
N-CH BV
P-CH BV
Max.
Max.
RoHS-compliant Product
±20
40
7.6
6.0
50
-55 to 150
-55 to 150
Rating
3.125
0.025
D1
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
S1
Value
-6.6
-5.3
±20
-40
-50
10
40
G2
AP4526GH
200904072-1/7
32mΩ
42mΩ
-6.6A
-40V
7.6A
Units
W/℃
℃/W
℃/W
40V
Unit
D2
W
S2
V
V
A
A
A

Related parts for AP4526GH

AP4526GH Summary of contents

Page 1

... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L G1 N-channel Parameter 3 AP4526GH RoHS-compliant Product N-CH BV 40V DSS R 32mΩ DS(ON) I 7.6A D P-CH BV -40V DSS R 42mΩ DS(ON) I -6. ...

Page 2

... AP4526GH N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... I =- =-32V DS V =-4. =-20V =3Ω, =4Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-2.4A =-5A dI/dt=-100A/µs AP4526GH Min. Typ. - =-250uA - =-10V - ...

Page 4

... AP4526GH N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o =150 Fig 12. Gate Charge Waveform AP4526GH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 T 0.01 Duty factor = t/T Peak ...

Page 6

... AP4526GH P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.1 0.3 0.5 0.7 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 100ms 0 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP4526GH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak ...

Page 8

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L Part Marking Information & Packing : TO-252(4L) 4526GH YWWSSS Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 6.40 6.6 B 5.2 5.35 C 9.40 9.80 D 2.40 2.70 1.27 REF 0.50 0.65 E3 3.50 4.00 R 0.80 1.00 G 0.40 0.50 H 2.20 2.30 J 0.45 0.50 K 0.00 0.075 L 0.90 1.20 M 5.40 5.60 1.All Dimensions Are in Millimeters. ...

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