AP2R403AGMT-HF Advanced Power Electronics Corp., AP2R403AGMT-HF Datasheet - Page 4

• Manufacturer Part Number: AP2R403AGMT-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2R403AGMT-HF

• Vds: 30V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 2.4
• Rds(on) / Max(m?) Vgs@4.5v: 3.3
• Qg (nc): 81
• Qgs (nc): 20
• Qgd (nc): 40
• Id(a): 36.8
• Pd(w): 83.3
• Configuration: Single N
• Package: PMPAK 5X6

AP2R403AGMT-HF
1000
100
160
120
10
80
40
1
8
6
4
2
0
0
0.01
25
0
Fig 9. Maximum Safe Operating Area
Fig 11. Maximum Continuous Drain
Fig 7. Gate Charge Characteristics
I
V
Single Pulse
D
T
DS
=20A
Operation in this
C
area limited by
=15V
=25
Current v.s. Case Temperature
R
DS(ON)
50
o
V
Q
C
T
DS
40
0.1
G
C
, Total Gate Charge (nC)
,Drain-to-Source Voltage (V)
, Case Temperature (
75
80
1
100
o
120
10
C )
125
100ms
100us
10ms
1ms
DC
160
100
150
Fig 10. Effective Transient Thermal Impedance
12000
10000
8000
6000
4000
2000
0.01
0.1
0.00001
1
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.05
0.02
V
Duty factor = 0.5
0.01
0.1
0.2
G
0.0001
5
Single Pulse
Q
V
GS
DS
9
0.001
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= PDM x R
t
T
f=1.0MHz
1
25
thjc
Q
+ T
C
C
C
c
iss
oss
rss
10
29
4