AP2R403AGMT-HF Advanced Power Electronics Corp., AP2R403AGMT-HF Datasheet - Page 3

• Manufacturer Part Number: AP2R403AGMT-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2R403AGMT-HF

• Vds: 30V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 2.4
• Rds(on) / Max(m?) Vgs@4.5v: 3.3
• Qg (nc): 81
• Qgs (nc): 20
• Qgd (nc): 40
• Id(a): 36.8
• Pd(w): 83.3
• Configuration: Single N
• Package: PMPAK 5X6

300
250
200
150
100
20
16
12
50
3.2
2.8
2.4
1.6
8
4
0
0
2
0
0
Fig 1. Typical Output Characteristics
2
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
Reverse Diode
DS
V
V
2
4
SD
, Drain-to-Source Voltage (V)
GS
T
T
j
, Source-to-Drain Voltage (V)
0.4
C
, Gate-to-Source Voltage (V)
=150
=25
o
o
C
C
0.6
4
6
I
T
D
C
=20A
=25
0.8
o
C
T
6
8
j
=25
V
1
G
o
= 4.0 V
C
7.0V
6.0V
5.0V
10V
1.2
10
8
2.0
1.6
1.2
0.8
0.4
160
120
1.6
1.2
0.8
0.4
0.0
80
40
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
I
D
D
G
=20A
=250uA
=10V
v.s. Junction Temperature
Junction Temperature
V
T
DS
T
1.0
j
0
j
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
T
C
AP2R403AGMT-HF
=150
o
C
2.0
50
50
3.0
100
o
100
o
C)
C)
V
G
=4.0V
7.0V
6.0V
5.0V
10V
4.0
150
150
3