AP2609GYT-HF Advanced Power Electronics Corp., AP2609GYT-HF Datasheet - Page 4

• Manufacturer Part Number: AP2609GYT-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2609GYT-HF

• Vds: -20V
• Vgs: ±8V
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 24
• Rds(on) / Max(m?) Vgs@1.8v: 35
• Qg (nc): 26.5
• Qgs (nc): 2.3
• Qgd (nc): 7
• Id(a): -11.3
• Pd(w): 3.57
• Configuration: P-Channel
• Package: PMPAK 3x3

AP2609GYT-HF
0.01
100
6
5
4
3
2
1
0
0.1
10
1
0
0.01
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
V
Fig 9. Maximum Safe Operating Area
I
10%
90%
DS
D
Operation in this area
V
Single Pulse
limited by R
V
= -7 A
T
GS
= -10 V
DS
A
=25
DS(ON)
-V
Q
o
10
DS
0.1
C
t
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
r
20
1
t
d(off)
30
10
t
f
100ms
100us
10ms
1ms
DC
1s
100
40
Fig 10. Effective Transient Thermal Impedance
3200
2400
1600
0.001
800
0.01
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
0.05
0.02
0.01
0.1
V
Duty factor=0.5
Single Pulse
0.2
G
0.001
5
-V
Q
GS
DS
0.01
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
9
Q
Q
0.1
Charge
G
GD
13
1
17
P
DM
Duty factor = t/T
Peak T
R
thia
10
=85 ℃/W
j
= P
t
DM
f=1.0MHz
T
21
x R
100
thja
C
C
C
+ T
Q
oss
rss
iss
a
1000
25
4