AP2609GYT-HF Advanced Power Electronics Corp., AP2609GYT-HF Datasheet - Page 3

• Manufacturer Part Number: AP2609GYT-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2609GYT-HF

• Vds: -20V
• Vgs: ±8V
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 24
• Rds(on) / Max(m?) Vgs@1.8v: 35
• Qg (nc): 26.5
• Qgs (nc): 2.3
• Qgd (nc): 7
• Id(a): -11.3
• Pd(w): 3.57
• Configuration: P-Channel
• Package: PMPAK 3x3

40
30
20
10
30
26
22
18
14
10
0
8
6
4
2
0
0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
-V
0.2
-V
Reverse Diode
SD
1
1
-V
DS
T
, Source-to-Drain Voltage (V)
GS
j
, Drain-to-Source Voltage (V)
=150
0.4
, Gate-to-Source Voltage (V)
o
2
2
C
0.6
T
I
T
A
D
A
3
=25
= -2 A
3
=25
0.8
T
o
℃
j
C
=25
V
4
o
4
G
C
1
= -1.8V
-5.0V
-4.5V
-3.5V
-2.5V
1.2
5
5
1.6
1.2
0.8
0.4
0.0
2.0
1.6
1.2
0.8
0.4
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
=-7A
=-4.5V
v.s. Junction Temperature
Junction Temperature
T
-V
1
T
j
DS
0
0
, Junction Temperature (
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
2
A
= 150
AP2609GYT-HF
50
50
o
C
3
o
100
100
C)
o
V
C)
4
G
= -1.8V
-5.0V
-4.5V
-3.5V
-2.5V
150
150
5
3