AP9928GEM Advanced Power Electronics Corp., AP9928GEM Datasheet - Page 3

• Manufacturer Part Number: AP9928GEM
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9928GEM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 23
• Rds(on) / Max(m?) Vgs@2.5v: 32
• Qg (nc): 17
• Qgs (nc): 2
• Qgd (nc): 9
• Id(a): 7.3
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

30
20
10
27
23
19
15
0
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
Reverse Diode
V
SD
DS
GS
1
4
T
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
j
=150
0.4
T
A
=25
o
C
o
0.6
2
6
C
0.8
T
I
A
D
T
8
3
=25
= 5 A
j
V
=25
G
o
1
C
=2.0V
3.5 V
3.0 V
o
4.5V
2.5V
C
10
1.2
4
30
20
10
1.8
1.4
1.0
0.6
1.6
1.2
0.8
0.4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
G
T
D
v.s. Temperature
Junction Temperature
V
= 4.5V
T
=7A
j
j
DS
1
0
0
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
A
= 150
50
2
50
o
C
AP9928GEM
o
100
100
3
o
C)
C)
V
G
= 2.0 V
3.5 V
3.0 V
4.5V
2.5V
150
150
4