AP9928GEM Advanced Power Electronics Corp., AP9928GEM Datasheet
AP9928GEM
Specifications of AP9928GEM
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AP9928GEM Summary of contents
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... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 Max. AP9928GEM Pb Free Plating Product BV 20V DSS R 23mΩ DS(ON Rating Units 20 V ± ...
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... AP9928GEM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP9928GEM 4. 150 C A 3.5 V 3 Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Temperature ...
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... AP9928GEM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area =25 ...