AP6923O Advanced Power Electronics Corp., AP6923O Datasheet - Page 3

• Manufacturer Part Number: AP6923O
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6923O

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Rds(on) / Max(m?) Vgs@2.5v: 85
• Qg (nc): 15.6
• Qgs (nc): 2.1
• Qgd (nc): 5.2
• Id(a): -3.5
• Pd(w): 1
• Configuration: Single P
• Package: TSSOP-8

MOSFET
0.01
180
140
100
32
24
16
60
20
0.1
10
8
0
1
Fig 3. On-Resistance v.s. Gate Voltage
0
1
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
T
A
=25
T
-V
j
=150
2
Reverse Diode
o
DS
C
1
, Drain-to-Source Voltage (V)
o
C
0.4
-V
3
-V
SD
GS
2
(V)
(V)
4
0.8
I
T
T
D
A
j
=25
= -3.5A
=25
3
V
5
o
o
G
C
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
C
=-2.0V
1.2
6
4
1.6
1.3
1.0
0.7
0.4
1.2
0.9
0.6
0.3
24
18
12
6
0
Fig 6. Gate Threshold Voltage v.s.
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
A
=150
V
I
-V
D
G
Junction Temperature
v.s. Junction Temperature
=-3.5A
=-4.5V
o
DS
T
T
C
1
j
0
0
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
50
50
2
100
100
AP6923O
3
o
o
C)
C)
V
G
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
= - 2.0V
150
150
4