AP6923O Advanced Power Electronics Corp., AP6923O Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP6923O

Manufacturer Part Number
AP6923O
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6923O

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
50
Rds(on) / Max(m?) Vgs@2.5v
85
Qg (nc)
15.6
Qgs (nc)
2.1
Qgd (nc)
5.2
Id(a)
-3.5
Pd(w)
1
Configuration
Single P
Package
TSSOP-8
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
V
V
I
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
AP6923O
Electrical Characteristics@T
Source-Drain Diode
Schottky Characteristics@Tj=25℃ ℃ ℃ ℃
DSS
GSS
d(on)
r
d(off)
f
S
rm
fs
GS(th)
SD
F
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Continuous Source Current ( Body Diode )
Maximum Reverse Leakage Current
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Forward Voltage Drop
2
copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
Parameter
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
I
I
Vr=20V
D
D
S
F
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
=1A
= -3.5A
= -1A
G
D
=-0.83A, V
=V
= 3.3Ω,V
= 10Ω
=0V, I
=-4.5V, I
=-2.5V, I
=V
=-10V, I
=-20V, V
=-16V ,V
= ± 12V
= -10V
= -4.5V
= -10V
=0V
=-20V
G
GS
=0V , V
Test Conditions
Test Conditions
Test Conditions
, I
D
D
=-250uA
=-250uA
D
GS
D
D
GS
GS
GS
=-3.5A
=-3.5A
=-2.7A
S
= -4.5V
=0V
=0V
=0V
=-1.2V
D
=-1mA
Min.
Min.
Min.
-0.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.03
15.6
66.4
Typ.
Typ.
660
285
130
2.1
5.2
8.2
9.4
10
48
-
-
-
-
-
-
-
-
-
-
-
-0.83
Max. Units
±100
Max. Units
Max. Units
-1.2
100
0.5
50
85
25
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
nC
nC
nC
uA
uA
nA
pF
pF
pF
uA
ns
ns
ns
ns
V
V
S
A
V
V

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