AP60T03GJ Advanced Power Electronics Corp., AP60T03GJ Datasheet - Page 3

• Manufacturer Part Number: AP60T03GJ
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP60T03GJ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 25
• Qg (nc): 12
• Qgs (nc): 4
• Qgd (nc): 7
• Id(a): 45
• Pd(w): 44
• Configuration: Single N
• Package: TO-251

125
100
100
0.1
75
50
25
10
80
60
40
20
0
0
1
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
T
j
V
=175
o
V
V
Reverse Diode
C
SD
DS
GS
4
1
, Source-to-Drain Voltage (V)
o
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
C
0.5
6
2
T
I
D
C
=25
T
=15A
j
=25
1
℃
o
8
3
C
V
G
=4.0V
5.0V
8.0V
6.0V
10V
1.5
10
4
2.8
2.3
1.8
1.3
0.8
0.3
90
60
30
1.6
1.2
0.8
0.4
0
2
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
T
I
D
G
C
=20A
=10V
=175
v.s. Junction Temperature
Junction Temperature
1
V
T
o
T
C
DS
j
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
25
25
2
AP60T03GH/J
3
100
100
V
o
o
C )
C)
4
G
=4.0V
5.0V
6.0V
8.0V
10V
175
175
5
3