AP60T03GJ Advanced Power Electronics Corp., AP60T03GJ Datasheet

AP60T03GJ

Manufacturer Part Number
AP60T03GJ
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP60T03GH.pdf (4 pages)

Specifications of AP60T03GJ

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
25
Qg (nc)
12
Qgs (nc)
4
Qgd (nc)
7
Id(a)
45
Pd(w)
44
Configuration
Single N
Package
TO-251
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP60T03GJ) are
available for low-profile applications.
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
3
-55 to 175
-55 to 175
Rating
BV
R
I
D
+20
120
0.3
2.4
30
45
32
44
DS(ON)
G
DSS
D
Value
AP60T03GH/J
62.5
110
S
3.4
G D
S
TO-252(H)
TO-251(J)
12mΩ
201112077
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
45A
W
W
℃
℃
V
V
A
A
A
1

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AP60T03GJ Summary of contents

Page 1

... The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GJ) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP60T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ∆BV /∆T DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 80 I =15A D ℃ ...

Page 4

AP60T03GH =20A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 100 Operation in this area limited ...

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