AP4816GSM Advanced Power Electronics Corp., AP4816GSM Datasheet - Page 4

• Manufacturer Part Number: AP4816GSM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4816GSM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 22
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 7
• Id(a): 6.7
• Pd(w): 1.4
• Configuration: Dual N
• Package: SO-8

V
I
C
Schottky Specifications@T
AP4816GSM
rm
F
T
Symbol
Forward Voltage Drop
Maximum Reverse Leakage Current
Maximum Reverse Leakage Current
Junction Capacitance
Parameter
j
=25
o
C(unless otherwise specified)
V
V
I
V
F
r
r
r
=1.0A
=30V
=30V,T
=10V
Test Conditions
j
=100℃
Min.
-
-
-
-
0.004
0.47
Typ.
0.5
66
Max. Units
0.5
0.2
1
-
mA
mA
pF
V
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