AP4816GSM Advanced Power Electronics Corp., AP4816GSM Datasheet - Page 3

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP4816GSM

Manufacturer Part Number
AP4816GSM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4816GSM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
22
Rds(on) / Max(m?) Vgs@4.5v
30
Qg (nc)
11
Qgs (nc)
3
Qgd (nc)
7
Id(a)
6.7
Pd(w)
1.4
Configuration
Dual N
Package
SO-8
ΔBV
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
CH-2 Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current ( T
Drain-Source Leakage Current (
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board, t <10 sec.
Parameter
Parameter
2
2
2
2
T
j
=25
j
=70
o
o
C)
C)
j
2
=25
V
V
Reference to 25℃,I
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=8A
=1A
G
D
=1A, V
=8A, V
o
=15Ω
=3.3Ω,V
=V
=10V, I
=30V, V
=24V, V
=24V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
=±20V
=4.5V
=0V
C(unless otherwise specified)
GS
Test Conditions
Test Conditions
GS
GS
, I
D
D
=250uA
D
=0V
=0V
D
GS
D
=250uA
GS
GS
=11A
=11A
=8A
=10V
=0V
=0V
D
=1mA
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AP4816GSM
1450 2320
Typ. Max. Units
Typ. Max. Units
0.03
320
230
1.5
15
20
12
12
31
12
27
18
5
8
-
-
-
-
-
-
-
-
±100
18.5
100
0.5
13
30
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mA
nC
nC
nC
nC
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
3/9

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