AP2306GN Advanced Power Electronics Corp., AP2306GN Datasheet - Page 4

• Manufacturer Part Number: AP2306GN
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2306GN

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 35
• Rds(on) / Max(m?) Vgs@2.5v: 50
• Qg (nc): 8.7
• Qgs (nc): 1.5
• Qgd (nc): 3.6
• Id(a): 5.3
• Pd(w): 1.38
• Configuration: Single N
• Package: SOT-23

AP2306GN
0.01
100
0.1
14
12
10
10
8
6
4
2
0
1
0.1
Fig 9. Maximum Safe Operating Area
0
Fig 11. Switching Time Circuit
Fig 7. Gate Charge Characteristics
V
I
+
-
Single Pulse
D
DS
T
=5.3A
A
=10V
10 V
=25
R
5
V
G
Q
DS
o
G
C
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
G
1
10
D
S
R
V
V
15
D
DS
GS
10
TO THE
OSCILLOSCOPE
0.75x RATED
V
20
1ms
10ms
100ms
1s
DC
100
25
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
0.001
1000
0.01
100
0.1
10
0.0001
1
1
Fig 12. Gate Charge Circuit
+
-
0.05
0.001
DUTY=0.5
0.1
5
0.2
0.01
Single Pulse
V
DS
1~ 3 mA
I
G
0.01
G
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
D
S
0.1
13
V
V
DS
GS
17
1
I
D
Duty factor = t/T
Peak T
Rthja = 270℃/W
P
DM
j
21
10
= P
TO THE
OSCILLOSCOPE
DM
0.5 x RATED V
t
x R
thja
T
f=1.0MHz
+ T
100
25
a
C
C
C
oss
iss
rss
DS
1000
29
4