AP2306GN Advanced Power Electronics Corp., AP2306GN Datasheet
AP2306GN
Specifications of AP2306GN
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AP2306GN Summary of contents
Page 1
... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter 4. 4. Parameter 3 AP2306GN BV 20V DSS R 35mΩ DS(ON Rating Units 20 V +12 V 5 ...
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... AP2306GN Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... D I =5.3A D 1 =4.5V G 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1 0.8 0.6 0.4 0.2 1.2 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP2306GN o C 5.0V 4.5V 4.0V V =2. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( Junction Temperature ...
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... AP2306GN 14 I =5. =10V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Circuit ...