AP2304AGN-HF Advanced Power Electronics Corp., AP2304AGN-HF Datasheet - Page 3

• Manufacturer Part Number: AP2304AGN-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2304AGN-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 117
• Rds(on) / Max(m?) Vgs@4.5v: 190
• Qg (nc): 3
• Qgs (nc): 0.8
• Qgd (nc): 1.8
• Id(a): 2.5
• Pd(w): 1.38
• Configuration: Single N
• Package: SOT-23

10.00
1.00
0.10
0.01
140
130
120
110
100
90
80
70
10
8
6
4
2
0
0.1
0
3
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
j
V
1
=150
V
SD
Reverse Diode
GS
V
, Source-to-Drain Voltage (V)
o
5
, Gate-to-Source Voltage (V)
DS
C
2
T
, Drain-to-Source Voltage (V)
0.5
A
=25
3
o
C
7
T
4
j
=25
0.9
o
5
C
I
T
D
9
A
=2A
=25
V
G
6
=3.0V
o
5.0V
6.0V
4.0V
C
10V
1.3
11
7
2.05
1.85
1.65
1.45
1.25
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=2.5A
=10V
V
1
Junction Temperature
DS
T
T
, Drain-to-Source Voltage (V)
0
j
0
j
, Junction Temperature (
, Junction Temperature (
2
T
A
3
=150
AP2304AGN-HF
50
50
o
C
4
5
100
100
o
o
C)
C)
V
G
6
=3.0V
5.0V
6.0V
4.0V
10V
150
150
7
3